Y. M. Kim, M. Urteaga, M. Dahlström, M. J. W. Rodwell, A. C. Gossard Department of Electrical Engineering, Materials Department

200 GHz fmax, fInP/In0.53Ga0.47As/InP Metamorphic Double Heterojunction Bipolar Transistors on GaAs Substrates

• Y.M. Kim, M. Urteaga, M. Dahlström, M.J.W. Rodwell, A.C. Gossard

• Department of Electrical Engineering, Materials Department,

• University of California, Santa Barbara

Morphology & RHEED of metamorphic layer

Morphology & RHEED of metamorphic layer

Device Junction Temperature Calculation

Simulation of HBT Junction Temperature vs. Buffer Layer Thermal Conductivity

Simulated HBT Temp vs. Power Density

Experimental Measurement of Temperature Rise

Results of Temperature Rise Measurement

Structure of metamorphic M-DHBT