Anna university :: chennai 600 025

TOTAL : 45

TEXT BOOKS

1. 
   Rafael C Gonzalez, Richard E Woods 2nd Edition, Digital Image Processing - Pearson Education 2003.
   

REFERENCES

1. 
   William K Pratt, Digital Image Processing John Willey (2001)
   
2. 
   Image Processing Analysis and Machine Vision – Millman Sonka, Vaclav hlavac, Roger Boyle, Broos/colic, Thompson Learniy (1999).
   
3. 
   A.K. Jain, PHI, New Delhi (1995)-Fundamentals of Digital Image Processing.
   
4. 
   Chanda Dutta Magundar – Digital Image Processing and Applications, Prentice Hall of India, 2000
   

EC1401 VLSI DESIGN 3 0 0 100

Aim

To introduce the technology, design concepts and testing of Very Large Scale Integrated Circuits.

Objectives

• 
  To learn the basic CMOS circuits.
  
• 
  To learn the CMOS process technology.
  
• 
  To learn techniques of chip design using programmable devices.
  
• 
  To learn the concepts of designing VLSI subsystems.
  
• 
  To learn the concepts of modeling a digital system using Hardware Description Language.
  

UNIT I CMOS TECHNOLOGY 9

An overview of Silicon semiconductor technology, Basic CMOS technology : nwell, P well, Twin tub and SOI Process. Interconnects, circuit elements: Resistors, capacitors, Electrically alterable ROMs, bipolar transistors, Latch up and prevention.

Layout design rules, physical design: basic concepts, CAD tool sets, physical design of logic gates: Inverter, NAND, NOR, Design Hierarchies.
UNIT II MOS TRANSISTOR THEORY 9

NMOS, PMOS Enhancement transistor, Threshold voltage, Body effect, MOS DC equations, channel length modulation, Mobility variation, MOS models, small signal AC characteristics, complementary CMOS inverter DC characteristics, Noise Margin, Rise time, fall time, power dissipation, transmission gate, tristate inverter.

UNIT III SPECIFICATION USING VERILOG HDL 9

Basic Concepts: VLSI Design flow, identifiers, gate primitives, value set, ports, gate delays, structural gate level and switch level modeling, Design hierarchies, Behavioral and RTL modeling: Operators, timing controls, Procedural assignments conditional statements, Data flow modeling and RTL.

Structural gate level description of decoder, equality detector, comparator, priority encoder, D-latch, D-ff, half adder, Full adder, Ripple Carry adder.

UNIT IV CMOS CHIP DESIGN 9

Logic design with CMOS: MOSFETS as switches, Basic logic gates in CMOS, Complex logic gates, Transmission gates: Muxes and latches, CMOS chip design options: Full custom ASICs, Std. Cell based ASICs, Gate Array based ASICs Channelled, Channelless and structured GA, Programmable logic structures; 22V10, Programming of PALs, Programmable Interconnect, Reprogrammable GA: Xilinx programmable GA, ASIC design flow.

UNIT V CMOS TESTING 9

Need for testing, manufacturing test principles, Design strategies for test, Chip level and system level test techniques.

TOTAL : 45

TEXT BOOKS

1. 
   Weste & Eshraghian: Principles of CMOS VLSI design (2/e) Addison Wesley, 1993 for UNIT I through UNIT IV.
   
2. 
   Samir Palnitkar; Verilog HDL - Guide to Digital design and synthesis, III edition, Pearson Education, 2003 for UNIT V
   

REFERENCES

1. 
   M.J.S.Smith : Application Specific integrated circuits, Pearson Education, 1997.
   
2. 
   Wayne Wolf, Modern VLSI Design, Pearson Education 2003.
   
3. 
   Bob Zeidmin ; Introduction to verilog, Prentice Hall, 1999
   
4. 
   J . Bhaskar : Verilog HDL Primer, BSP, 2002.
   
5. 
   E. Fabricious , Introduction to VLSI design, McGraw-Hill 1990.
   
6. 
   C. Roth, Digital Systems Design Using VHDL, Thomson Learning, 2000.
   

EC1402 OPTICAL COMMUNICATION 3 0 0 100

AimS

• 
  To introduce the various optical fiber modes, configurations and various signal degradation factors associated with optical fiber.
  
• 
  To study about various optical sources and optical detectors and their use in the optical communication system. Finally to discuss about digital transmission and its associated parameters on system performance.
  

Objectives

• 
  To learn the basic elements of optical fiber transmission link, fiber modes configurations and structures.
  
• 
  To understand the different kind of losses, signal distortion in optical wave guides and other signal degradation factors. Design optimization of SM fibers, RI profile and cut-off wave length.
  
• 
  To learn the various optical source materials, LED structures, quantum efficiency, Laser diodes and different fiber amplifiers.
  
• 
  To learn the fiber optical receivers such as PIN APD diodes, noise performance in photo detector, receiver operation and configuration.
  
• 
  To learn fiber slicing and connectors, noise effects on system performance, operational principles WDM and solutions.
  

UNIT I INTRODUCTION TO OPTICAL FIBERS 9

Evolution of fiber optic system- Element of an Optical Fiber Transmission link- Ray Optics-Optical Fiber Modes and Configurations –Mode theory of Circular Wave guides- Overview of Modes-Key Modal concepts- Linearly Polarized Modes –Single Mode Fibers-Graded Index fiber structure.

UNIT II SIGNAL DEGRADATION OPTICAL FIBERS 9

Attenuation – Absorption losses, Scattering losses, Bending Losses, Core and Cladding losses, Signal Distortion in Optical Wave guides-Information Capacity determination –Group Delay-Material Dispersion, Wave guide Dispersion, Signal distortion in SM fibers-Polarization Mode dispersion, Intermodal dispersion, Pulse Broadening in GI fibers-Mode Coupling –Design Optimization of SM fibers-RI profile and cut-off wavelength.
UNIT III FIBER OPTICAL SOURCES AND COUPLING 9

Direct and indirect Band gap materials-LED structures –Light source materials –Quantum efficiency and LED power, Modulation of a LED, lasers Diodes-Modes and Threshold condition –Rate equations –External Quantum efficiency –Resonant frequencies –Laser Diodes, Temperature effects, Introduction to Quantum laser, Fiber amplifiers- Power Launching and coupling, Lencing schemes, Fibre –to- Fibre joints, Fibre splicing.

UNIT IV FIBER OPTICAL RECEIVERS 9

PIN and APD diodes –Photo detector noise, SNR, Detector Response time, Avalanche Multiplication Noise –Comparison of Photo detectors –Fundamental Receiver Operation – preamplifiers, Error Sources –Receiver Configuration –Probability of Error – Quantum Limit.

UNIT V DIGITAL TRANSMISSION SYSTEM 9

Point-to-Point links System considerations –Link Power budget –Rise - time budget –Noise Effects on System Performance-Operational Principles of WDM, Solitons-Erbium-doped Amplifiers. Basic on concepts of SONET/SDH Network. .

TOTAL : 45

TEXT BOOK

1. 
   Gerd Keiser, “Optical Fiber Communication” McGraw –Hill International, Singapore, 3^rd ed., 2000
   

REFERENCES

1. 
   J.Senior, “Optical Communication, Principles and Practice”, Prentice Hall of India, 1994.
   
2. 
   J.Gower, “Optical Communication System”, Prentice Hall of India, 2001.
   

EC1403 MICROWAVE ENGINEERING 3 0 0 100

Aim

To enable the student to become familiar with active & passive microwave devices & components used in Microwave communication systems.

Objectives

• 
  To study passive microwave components and their S- Parameters.
  
• 
  To study Microwave semiconductor devices & applications.
  
• 
  To study Microwave sources and amplifiers.
  

UNIT I 9

Microwave Frequencies, Microwave Devices, Microwave Systems, Microwave Units of Measure, Microwave Hybrid Circuits, Waveguide Tees, Magic Tees (Hybrid Trees), Hybrid Rings (Rat-Race Circuits), Waveguide Corners, Bends and Twists, Directional Couplers, Two-Hole Directional Couplers, Z & ABCD Parameters- Introduction to S parameters, S Matrix of a Directional Coupler, Hybrid Couplers, Circulators and Isolators, Microwave Circulators, Microwave Isolators.

UNIT II 9

Transit time limitations in transistors, Microwave bipolar transistors, power frequency limitations microwave field effect transistors, HEMT, Gunn effect – RWH theory, high – field domain and modes of operation microwave amplification – Avalance transit time devices – IMPATT and TRAPATT diodes and comparison parametric amplifiers.

UNIT III TRANSFERRED ELECTRON DEVICES (TEDs) and AVALANCHETRANSIT-TIME DEVICES 9

Introduction, Gunn-Effect Diodes – GaAs Diode, Background, Gunn Effect, Ridely-Watkins-Hilsun (RWH) Theory, Differential Negative Resistance, Two-Valley Model Theory, High-Field Domain, Modes of Operation, LSA Diodes, InP Diodes, CdTe Diodes, Microwave Generation and Amplification, Microwave Generation, Microwave Amplification, AVALANCHE TRANSIT-TIME DEVICES, Introduction, Read Diode, Physical Description, Avalanche Multiplication, Carrier Current I_o(t) and External Current I­_e­(t), Output Power and Quality Factor, IMPATT Diodes, Physical Structures, Negative Resistance, Power Output and Efficiency, TRAPATT Diodes, Physical Structures, Principles of Operation, Power Output and Efficiency, BARITT Diodes, Physical Description, Principles of Operation, Microwave Performance, Parametric Devices, Physical Structures, Nonlinear Reactance and Manley – Rowe Power Relations, Parametric Amplifiers, Applications.

UNIT III MICROWAVE LINEAR-BEAM TUBES (O TYPE) and MICROWAVE CROSSED-FIELD TUBES (M TYPE) 9

Klystrons, Reentrant Cavities, Velocity-Modulation Process, Bunching Process, Output Power and Beam Loading, State of the Art, Multicavity Klystron Amplifiers, Beam-Current Density, Output Current Output Power of Two-Cavity Klystron, Output Power of Four-Cavity Klystron, Reflex Klystrons, Velocity Modulation, Power Output and Efficiency, Electronic Admittance, Helix Traveling-Wave Tubes (TWTs), Slow-Wave structures, Amplification Process, Convection Current, Axial Electric Field, Wave Modes, Gain Consideration, MICROWAVE CROSSED-FIELD TUBES , Magnetron Oscillators, Cylindrical Magnetron, Coaxial Magnetron, Tunable Magnetron, Ricke diagram.

UNIT IV STRIP LINES and MONOLITHIC MICROWAVE INTEGRATED CIRCUITS 9

Introduction, Microstrip Lines, Characteristic Impedance of Microstrip Lines, Losses in Microstrip Lines, Quality Factor Q of Microstrip Lines, Parallel Strip Lines, Distributed Lines, Characteristic Impedance, Attenuation Losses, Coplanar Strip Lines, Shielded Strip Lines, References, Problems, MONOLITHIC MICROWAVE INTEGRATED CIRCUITS, Introduction, Materials, Substrate Materials, Conductor Materials, Dielectric Materials, Resistive Materials, Monolithic Microwave Integrated-Circuit Growth, MMIC Fabrication Techniques, Fabrication Example.

UNIT V MICROWAVE MEASUREMENTS: 9

Slotted line VSWR measurement, VSWR through return loss measurements, power measurement, impedance measurement insertion loss and attenuation measurements- measurement of scattering parameters – Measurement of 1 dB, dielectric constant measurement of a solid using waveguide

TOTAL : 45

TEXT BOOKS

1. 
   Samuel Y.LIAO : Microwave Devices and Circuits – Prentice Hall of India – 3^rd Edition (2003)
   
2. 
   Annapurna Das and Sisir K.Das: Microwave Engineering – Tata McGraw-Hill (2000) (UNIT V)
   

References

1. 
   R.E. Collin : Foundations for Microwave Engg. – IEEE Press Second Edition (2002)
   
2. 
   David M.POZAR : Microwave Engg. – John Wiley & Sons – 2^nd Edition (2003)
   
3. 
   P.A.RIZZI – Microwave Engg. (Passive ckts) – PH1