6 |
P a g e
voltage and current ratings are lower than those of thyristors and are therefore used in low to medium
power applications. Power transistors are classified as follows o Bipolar junction transistors(BJTs) o
Metal-oxide semiconductor filed-effect transistors(MOSFETs) o Static Induction transistors(SITs) o
Insulated-gate bipolar transistors(IGBTs)
Advantages of
BJT’S
i.
BJT’s have high switching frequencies
since their turn
-on and turn-off time are low.
ii.
The turn-on losses of a BJT are small.
iii.
BJT has controlled turn-on and turn-off characteristics since base drive control is possible.
iv.
BJT does not require commutation circuits
Demerits of BJT
i.
Drive circuit of BJT is complex.
ii.
It has the problem of charge storage which sets a limit on switching frequencies.
iii.
It cannot be used in parallel operation due to problems of negative temperature coefficient.
Thyristors
–
Silicon Controlled Rectifiers (SCR’s)
A silicon controlled rectifier or semiconductor-controlled rectifier is a four-layer
solidstate current-
controlling device. The name "silicon controlled rectifier" is General Electric's trade name for a type of
thyristor.
SCRs are mainly used in electronic devices that require control of high voltage and power. This makes
them applicable in medium and high AC power operations such as motor control function.
An SCR conducts when a gate pulse is applied to it, just like a diode.
It has four layers of
semiconductors that form two structures namely; NPNP or PNPN.
In addition, it has three junctions
labeled as J1, J2 and J3 and three terminals(anode, cathode and a gate).
An SCR is diagramatically
represented as shown below.
Dostları ilə paylaş: