B e-electronics and communication engineering



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TOTAL 45



TEXT BOOKS

  1. Rafael C Gonzalez, Richard E Woods 2nd Edition, Digital Image Processing - Pearson Education 2003.

  2. Chanda Dutta Magundar – Digital Image Processing and Applications, Prentice Hall of India, 2000.


REFERENCE BOOKS

  1. William K Pratt, Digital Image Processing John Willey (2001).

  2. Image Processing Analysis and Machine Vision – Millman Sonka, Vaclav hlavac, Roger Boyle, Broos/colic, Thompson Learniy (1999).

  3. A.K. Jain, PHI, New Delhi (1995)-Fundamentals of Digital Image Processing.



WEBSITE INFORMATION

  1. www.markosweb.com/www/imagiris.com

  2. www.imageprocessingplace.com

  3. www.informaworld.com

  4. www.engineeringcrossing.com


  1. 11UEC7003 VLSI DESIGN 3 1 0 4




Objectives

At the end of the course the student should be able



  • To learn the basic CMOS circuits.

  • To learn the CMOS process technology.

  • To learn techniques of chip design using programmable devices.

  • To learn the concepts of designing VLSI subsystems.

  • To learn the concepts of modeling a digital system using Hardware Description Language.


UNIT I CMOS TECHNOLOGY 9

An overview of Silicon semiconductor technology, Basic CMOS technology: nwell, P well, Twin tub and SOI Process. Interconnects, circuit elements: Resistors, capacitors, Electrically alterable ROMs, bipolar transistors, Latch up and prevention.

Layout design rules, physical design: basic concepts, CAD tool sets, physical design of logic gates: Inverter, NAND, NOR, Design Hierarchies.
UNIT II MOS TRANSISTOR THEORY 9

NMOS, PMOS Enhancement transistor, Threshold voltage, Body effect, MOS DC equations, channel length modulation, Mobility variation, MOS models, small signal AC characteristics, complementary CMOS inverter DC characteristics, Noise Margin, Rise time, fall time, power dissipation, transmission gate, tristate inverter.


UNIT III SPECIFICATION USING VERILOG HDL 9 Basic Concepts: VLSI Design flow, identifiers, gate primitives, value set, ports, gate delays, structural gate level and switch level modeling, Design hierarchies, Behavioral and RTL modeling: Operators, timing controls, Procedural assignments conditional statements, Data flow modeling and RTL.

Structural gate level description of decoder, equality detector, comparator, priority encoder, D-latch, D-ff, half adder, Full adder, Ripple Carry adder.


UNIT IV CMOS CHIP DESIGN 9

Logic design with CMOS: MOSFETS as switches, Basic logic gates in CMOS, Complex logic gates, Transmission gates: Muxes and latches, CMOS chip design options: Full custom ASICs, Std. Cell based ASICs, Gate Array based ASICs Channelled, Channelless and structured GA, Programmable logic structures; 22V10, Programming of PALs, Programmable Interconnect, Reprogrammable GA: Xilinx programmable GA, ASIC design flow.


  1. UNIT V CMOS TESTING 9


Need for testing, manufacturing test principles, Design strategies for test, Chip level and system level test techniques.

TUTORIAL 15

TOTAL 45

TEXT BOOKS

  1. Weste & Eshraghian: Principles of CMOS VLSI design (2/e) Addison Wesley, 1993.

  2. Samir Palnitkar; Verilog HDL - Guide to Digital design and synthesis, III edition, Pearson Education, 2003.

REFERENCE BOOKS

  1. M.J.S.Smith : Application Specific integrated circuits, Pearson Education, 1997.

  2. Wayne Wolf, Modern VLSI Design, Pearson Education 2003.

  3. Bob Zeidmin ; Introduction to verilog, Prentice Hall, 1999

  4. J . Bhaskar : Verilog HDL Primer, BSP, 2002.

  5. E. Fabricious , Introduction to VLSI design, McGraw-Hill 1990.

  6. C. Roth, Digital Systems Design Using VHDL, Thomson Learning, 2000.



WEBSITE INFORMATION

  1. www.vlsi-design.net/category/websites

  2. www.wiley.com

  3. ugpro143.blogspot.com

11UEC7004 MICROWAVE ENGINEERING 3 0 0 3

                1. OBJECTIVES

  1. At the end of the course the student should be able

  • To understand passive microwave components and their S- Parameters.

  • To know about Microwave semiconductor devices & applications.

  • To know about Microwave sources and amplifiers.

UNIT I introduction 9

Microwave Frequencies, Microwave Devices, Microwave Systems, Microwave Units of Measure, Microwave Hybrid Circuits, Waveguide Tees, Magic Tees (Hybrid Trees), Hybrid Rings (Rat-Race Circuits), Waveguide Corners, Bends and Twists, Directional Couplers, Two-Hole Directional Couplers, Z & ABCD Parameters- Introduction to S parameters, S Matrix of a Directional Coupler, Hybrid Couplers, Circulators and Isolators, Microwave Circulators, Microwave Isolators.


UNIT II TRANSFERRED ELECTRON DEVICES (TEDs) and AVALANCHE TRANSIT-TIME DEVICES 9

Introduction, Gunn-Effect Diodes – GaAs Diode, Background, Gunn Effect, Ridely-Watkins-Hilsun (RWH) Theory, Differential Negative Resistance, Two-Valley Model Theory, High-Field Domain, Modes of Operation, LSA Diodes, Microwave Generation and Amplification, Microwave Generation, Microwave Amplification.



AVALANCHE TRANSIT-TIME DEVICES, Introduction, Read Diode, Physical Description, Avalanche Multiplication, Carrier Current Io(t) and External Current I­(t), Output Power and Quality Factor, IMPATT Diodes, Physical Structures, Negative Resistance, Power Output and Efficiency, TRAPATT Diodes, Physical Structures, Principles of Operation, Power Output and Efficiency, BARITT Diodes.
UNIT III MICROWAVE LINEAR-BEAM TUBES (O TYPE) and MICROWAVE CROSSED-FIELD TUBES (M TYPE) 9

Klystrons, Reentrant Cavities, Velocity-Modulation Process, Bunching Process, Output Power and Beam Loading, Multicavity Klystron Amplifiers, Beam-Current Density, Output Current Output Power of Two-Cavity Klystron, Output Power of Four-Cavity Klystron, Reflex Klystrons, Velocity Modulation, Power Output and Efficiency, Electronic Admittance, Helix Traveling-Wave Tubes (TWTs), Slow-Wave structures, Amplification Process, Convection Current, Axial Electric Field, Wave Modes, Gain Consideration. Magnetron Oscillators.



UNIT IV STRIP LINES and MONOLITHIC MICROWAVE INTEGRATED CIRCUITS 9

Introduction, Microstrip Lines, Characteristic Impedance of Microstrip Lines, Losses in Microstrip Lines, Quality Factor Q of Microstrip Lines, Parallel Strip Lines, Distributed Lines, Characteristic Impedance, Attenuation Losses, Coplanar Strip Lines, Shielded Strip Lines.


UNIT V MICROWAVE MEASUREMENTS 9 Slotted line VSWR measurement, VSWR through return loss measurements, power measurement, impedance measurement insertion loss and attenuation measurements- measurement of scattering parameters –network analyzer and its application. Frequency measurement-directional coupler characteristics measurement .

TOTAL 45

TEXT BOOKS

  1. Samuel Y.LIAO : Microwave Devices and Circuits – Prentice Hall of India – 3rd Edition (2003)

  2. David M.Pozar : Microwave Engg. – John Wiley & Sons – 2nd Edition (2003).

  3. Annapurna Das and Sisir K.Das: Microwave Engineering – Tata McGraw-Hill (2000).



Reference BOOKs

  1. R.E. Collin : Foundations for Microwave Engg. – IEEE Press Second Edition (2002).

  2. P.A.Rizzi – Microwave Engg. (Passive ckts) – PHI.

  3. Herbert J. Reich, J.G. Skalnik, P.F. Ordung and H.L. Krauss “ Microwave Principles “, CBS Publishers and Distributors, New Delhi, 2004.




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