Anna university :: chennai 600 025

CS1018 SOFT COMPUTING 3 0 0 100

AIM

To introduce the techniques of soft computing and adaptive neuro-fuzzy inferencing systems which differ from conventional AI and computing in terms of its tolerance to imprecision and uncertainty.

OBJECTIVES

• 
  To introduce the ideas of fuzzy sets, fuzzy logic and use of heuristics based on human experience
  
• 
  To become familiar with neural networks that can learn from available examples and generalize to form appropriate rules for inferencing systems
  
• 
  To provide the mathematical background for carrying out the optimization associated with neural network learning
  
• 
  To familiarize with genetic algorithms and other random search procedures useful while seeking global optimum in self-learning situations
  
• 
  To introduce case studies utilizing the above and illustrate the intelligent behavior of programs based on soft computing
  

UNIT I FUZZY SET THEORY 10

Introduction to Neuro – Fuzzy and Soft Computing – Fuzzy Sets – Basic Definition and Terminology – Set-theoretic Operations – Member Function Formulation and Parameterization – Fuzzy Rules and Fuzzy Reasoning – Extension Principle and Fuzzy Relations – Fuzzy If-Then Rules – Fuzzy Reasoning – Fuzzy Inference Systems – Mamdani Fuzzy Models – Sugeno Fuzzy Models – Tsukamoto Fuzzy Models – Input Space Partitioning and Fuzzy Modeling.

UNIT II OPTIMIZATION 8

Derivative-based Optimization – Descent Methods – The Method of Steepest Descent – Classical Newton’s Method – Step Size Determination – Derivative-free Optimization – Genetic Algorithms – Simulated Annealing – Random Search – Downhill Simplex Search.

UNIT III NEURAL NETWORKS 10

Supervised Learning Neural Networks – Perceptrons - Adaline – Backpropagation Mutilayer Perceptrons – Radial Basis Function Networks – Unsupervised Learning Neural Networks – Competitive Learning Networks – Kohonen Self-Organizing Networks – Learning Vector Quantization – Hebbian Learning.

UNIT IV NEURO FUZZY MODELING 9

Adaptive Neuro-Fuzzy Inference Systems – Architecture – Hybrid Learning Algorithm – Learning Methods that Cross-fertilize ANFIS and RBFN – Coactive Neuro Fuzzy Modeling – Framework Neuron Functions for Adaptive Networks – Neuro Fuzzy Spectrum.

UNIT V APPLICATIONS OF COMPUTATIONAL INTELLIGENCE 8

Printed Character Recognition – Inverse Kinematics Problems – Automobile Fuel Efficiency Prediction – Soft Computing for Color Recipe Prediction.

TOTAL : 45

TEXT BOOK

1. 
   J.S.R.Jang, C.T.Sun and E.Mizutani, “Neuro-Fuzzy and Soft Computing”, PHI, 2004, Pearson Education 2004.
   

REFERENCES

1. 
   Timothy J.Ross, “Fuzzy Logic with Engineering Applications”, McGraw-Hill, 1997.
   
2. 
   Davis E.Goldberg, “Genetic Algorithms: Search, Optimization and Machine Learning”, Addison Wesley, N.Y., 1989.
   
3. 
   S. Rajasekaran and G.A.V.Pai, “Neural Networks, Fuzzy Logic and Genetic Algorithms”, PHI, 2003.
   
4. 
   R.Eberhart, P.Simpson and R.Dobbins, “Computational Intelligence - PC Tools”, AP Professional, Boston, 1996.
   

EC1012 SOLID STATE ELECTRONIC DEVICES 3 0 0 100

AIM

To have fundamental knowledge about structure of devices, VI characteristics of devices like PN Junction diode, Zener diode, MOSFET, BJT and Opto electronic.

OBJECTIVES:

• 
  To learn crystal structures of elements used for fabrication of semiconductor devices.
  
• 
  To study energy band structure of semiconductor devices.
  
• 
  To understand fermi levels, movement of charge carriers, Diffusion current and Drift current.
  
• 
  To study behavior of semiconductor junction under different biasing conditions. Fabrication of different semiconductor devices, Varactor diode, Zener diode, Schottky diode, BJT, MOSFET, etc.
  
• 
  To study the VI Characteristics of devices and their limitations in factors like current, power frequency.
  
• 
  To learn photoelectric effect and fabrication of opto electronic devices.
  

UNIT I CRYSTAL PROPERTIES AND GROWTH OF SEMICONDUCTORS 9

Semiconductor materials- Periodic Structures- Crystal Lattices- Cubic lattices –Planes and Directions-The Diamond lattice- Bulk Crystal Growth-Starting Materials-Growth of Single Crystal lngots-Wafers-Doping- Epitaxial Growth –Lattice Matching in Epitaxial Growth –Vapor –Phase Epitaxy-Atoms and Electrons-Introduction to Physical Models-Experimental Observations-The Photoelectric Effect-Atomic spectra-The Bohr model- Quantum Mechanics –Probability and the Uncertainty Principle-The Schrodinger Wave Equation –Potential Well Equation –Potential well Problem-Tunneling.

UNIT II ENERGY BANDS AND CHARGE CARRIERS IN SEMICONDUCTORS 9

Bonding Forces and Energy bands in Solids-Bonding Forces in Solids-Energy Bands-Metals, Semiconductors, and Insulators – Direct and Indirect Semiconductors –Variation of Energy Bands with Alloy Composition-Charge Carriers in Semiconductors-Electrons and Holes-Effective Mass-Intrinsic Material-Extrinsic Material – Electrons and Holes in Quantum Wells-Carrier Concentrations-The Fermi Level-Electron and Hole Concentrations at Equilibrium-Temperature Dependence of Carrier Concentrations-Compensation and Space Charge Neutrality-Drift of Carrier in Electric and Magnetic Fields conductivity and Mobility-Drift and Resistance –Effects of Temperature and Doping on Mobility-High –Field effects-The Hall Effect -invariance of the Fermi level at equilibrium -Excess Carrier in Semiconductors-Optical Absorption- Luminescence-Photoluminescence-Electro luminescence-Carrier Lifetime and Photoconductivity –Direct Recombination of Electrons and Holes – Indirect Recombination ; Trapping –Steady State Carrier Generation ; Quasi-Fermi Levels-Photoconductive Devices-Diffusion of Carriers-Diffusion of Processes-Diffusion and Drift of Carrier; Built-in Fields-Diffusion and Recombination; The Continuity Equation –Steady state Carrier Injection; Diffusion Length-The Haynes- Shockley Experiment –Gradients in the Quasi-Fermi levels.

UNIT III JUNCTIONS 9

Fabrication of P-N Junctions-Thermal Oxidation-Diffusion –Rapid Thermal Processing-Ion Implantation-Chemical Vapor Deposition Photolithography-Etching –Metallization-Equilibrium Conditions-The Contact Potential-Equilibrium Fermi Levels –Space Charge at a Junction-Forward –and Reverse –Biased Junctions; -Steady state conditions-Qualitative Description Of current flow at a junction-Carrier Injection-Reverse Bias-Reverse –Bias Breakdown-Zener Breakdown –Avalanche Breakdown-Rectifiers-The Breakdown Diode-Transient and AC Conditions –Time variation of stored charge-Reverse Recovery Transient –Switching Diodes –Capacitance of P-N Junctions-The Varactor Diode-Deviations from the Simple Theory-Effects of contact Potential on carrier injection-Recombination and Generation in the Transition Region-Ohmic Losses –Graded Junctions-Metal –Semiconductor Junctions-Schottky Barriers-Rectifying contacts-Ohmic Contacts-Typical Schottky Barriers-Hetrojunctions

UNIT IV THE METAL –SEMICONDUCTOR-FET 9

The GaAS MESFET-The High Electron Mobility Transistor –Short channel Effects-The Metal Insulator Semiconductor FET-Basic Operation and Fabrication –THE ideal MOS Capacitor-Effects of Real Surfaces-Threshold Voltage –MOS capacitance Measurements- current –Voltage Characteristics of MOS Gate Oxides -The MOS Field –Effect Transistor –Output characteristics-Transfer characteristics- Mobility Models-Short channel MOSFET I-V characteristics –Control of Threshold Voltage –Substrate Bias Effects-Sub threshold characteristics –Equivalent Circuit for the MOSFET-MOSFET Scaling and Hot Electron Effects-Drain –Induced Barrier Lowering –short channel and Narrow Width Effect-Gate –Induced Drain Leakage-BJT Fabrication –Minority carrier distribution and Terminal currents-Solution of the Diffusion Equation in the Base Region-Evaluation of the Terminal currents –Current Transfer Ratio-Generalized Biasing –The coupled –Diode Model-Charge control analysis-Switching –cut off –saturation-The switching cycle-Specifications for switching Transistors-other Important Effects-Drift in the base Narrowing –Avalanche Breakdown –Injection level; Thermal Effects-Base Resistance and Emitter Crowding – Gummel –Poon Model-Kirk Effect-Frequency Limitations of Transistors-Capacitance and Charging Times-Transit Time Effects-Webster Effect-High –Frequency Transistors - Heterojunction Bipolar Transistors.

UNIT V OPTOELCTRONIC DEVICES 9

Photodiodes-Current and Voltage in illuminated Junction-Solar Cells-Photo detectors-Noise and Bandwidth of Photo detectors-Light-Emitting Diodes-Light Emitting Materials-Fiber Optic Communications Multilayer Heterojunctions for LEDs- Lasers-Semiconductor lasers-Population Inversion at a Junction Emission Spectra for p-n junction-The Basic Semiconductor lasers-Materials for Semiconductor lasers-Integrated Circuits –Background –Advantages of Integration –Types of Integrated circuits-Monolithic and Hybrid Circuits-Evolution of Integrated Circuits-Monolithic Device Elements CMOS Process Integration –Silicon –on – Insulator (SOI)-Integration of other Circuit Elements –Charge Transfer Devices –Dynamic Effects in MOS capacitors –The basic CCD-Improvements on the Basic Structure –Applications of CCDs-Ultra Large –Scale Integration (ULSI) –Logic devices –Semiconductor Memories-Testing, bonding , and Packaging-Testing –Wire Bonding –Flip-flop Techniques-Packaging
TOTAL : 45

TEXT BOOK

1. 
   Ben.G.Streetman & Sanjan Banerjee Solid State Electronic Devices (5^th Edition) PHI Private Ltd, 2003
   

REFERENCES

1. 
   Yannis Tsividis: Operation & Mode line of The MOS Transistor (2^nd Edition) Oxford University Press, 1999
   

2. Nandita Das Gupta &Aamitava Das Gupta- Semiconductor Devices Modeling a Technology, PHI, 2004.

EC1013 WIRELESS NETWORKS 3 0 0 100

AIM

To study some fundamental concepts in wireless networks.

OBJECTIVES

 To understand physical as wireless MAC layer alternatives techniques.

 To learn planning and operation of wireless networks.

 To study various wireless LAN and WAN concepts.

 To understand WPAN and geo-location systems.
UNIT I PHYSICAL AND WIRELESS MAC LAYER ALTERNATIVES 9

Wired transmission techniques: design of wireless modems, power efficiency, out of band radiation, applied wireless transmission techniques, short distance base band transmission, VWB pulse transmission, broad Modems for higher speeds, diversity and smart receiving techniques, random access for data oriented networks, integration of voice and data traffic.

UNIT II WIRELESS NETWORK PLANNING AND OPERATION 9

Wireless networks topologies, cellular topology, cell fundamentals signal to interference ratio calculation, capacity expansion techniques, cell splitting, use of directional antennas for cell sectoring, micro cell method, overload cells, channels allocation techniques and capacity expansion FCA, channel borrowing techniques, DCA, mobility management, radio resources and power management securities in wireless networks.

UNIT III WIRELESS WAN 9

Mechanism to support a mobile environment, communication in the infrastructure, IS-95 CDMA forward channel, IS – 95 CDMA reverse channel, pallert and frame formats in IS – 95, IMT – 2000; forward channel in W-CDMA and CDMA 2000, reverse channels in W-CDMA and CDMA-2000, GPRS and higher data rates, short messaging service in GPRS mobile application protocols.

UNIT IV WIRELESS LAN 9

Historical overviews of the LAN industry, evolution of the WLAN industry, wireless home networking, IEEE 802.11. The PHY Layer, MAC Layer, wireless ATM, HYPER LAN, HYPER LAN – 2.

UNIT V WPAN ANDGEOLOCATION SYSTEMS 9

IEEE 802.15 WPAN, Home RF, Bluetooth, interface between Bluetooth and 802.11, wireless geolocation technologies for wireless geolocation, geolocation standards for E.911 service.

TOTAL : 45

TEXT BOOKS

1. Kaveh Pahlavan, Prashant Krishnamoorthy, Principles of Wireless Networks, - A united approach - Pearson Education, 2002.

REFERENCES

1. 
   Jochen Schiller, Mobile Communications, Person Education – 2003, 2^nd Edn.
   
2. 
   X.Wang and H.V.Poor, Wireless Communication Systems, Pearson education, 2004.
   
3. 
   M.Mallick, Mobile and Wireless design essentials, Wiley Publishing Inc. 2003.
   
4. 
   P.Nicopolitidis, M.S.Obaidat, G.I. papadimitria, A.S. Pomportsis, Wireless Networks, John Wiley & Sons, 2003.
   

EC1014 TELECOMMUNICATION SWITCHING AND NETWORKS 3 0 0 100

AIMS

• 
  To introduce fundamentals functions of a telecom switching office, namely, digital multiplexing, digital switching and digital subscriber access.
  
• 
  To introduce a mathematical model for the analysis of telecommunication traffic.
  

OBJECTIVES

• 
  To introduce the concepts of Frequency and Time division multiplexing.
  
• 
  To introduce digital multiplexing and digital hierarchy namely SONET / SDH
  
• 
  To introduce the concepts of space switching, time switching and combination switching, example of a switch namely No.4 ESS Toll switch.
  
• 
  To introduce the need for network synchronization and study synchronization issues. To outline network control and management issues.
  
• 
  To study the enhanced local loop systems in digital environment. To introduce ISDN, DSL / ADSL, and fiber optic systems in subscriber loop.
  
• 
  To introduce statistical modeling of telephone traffic. To study blocking system characteristics and queuing system characteristics.
  
• 
  To characterize blocking probability holding service time distributions for in speech and data networks.