52
w w w. p v - te ch . o rg
Cell
Processing
J
0
given
by the equation
J
0
=
J
0b
+
J
0fp
+
J
0fc
+
J
0rp
+
J
0rc
(2)
where
J
0
is the sum of the individual
components stemming from the bulk and
the front and rear non-contacted/contacted
regions respectively (see Fig. 6). The
relationship between
J
0
and
V
oc
is given by
(3)
Because the doping level and the bulk
lifetime of the starting wafers are usually
known (or
the maximum bulk lifetime
can be evaluated using the model of Kerr-
Cuevas [6,7]), the bulk recombination
current
J
0b
can be easily calculated [5–7].
This in turn provides an upper
V
oc
limit that
can be achieved with the particular wafers
used. The surface recombination current
J
0fp
of the passivated (non-contacted) regions
of the solar
cell can be extracted from
photoconductance decay measurements
performed on symmetrically passivated
lifetime samples according to the Kane-
Swanson method [3]. The total surface
recombination current associated with the
front and rear metal contacts
J
0fc
and
J
0rc
can then be determined.
This subsequently
allows the open-circuit voltage to be
calculated using Equation 3, and this value
can then be compared with the measured
open-circuit voltage. Alternatively, the
individual components
J
0fc
and
J
0rc
can be
measured by means of lifetime-calibrated
photoluminescence spectroscopy.
As an example, Fig. 7
shows the relative
V
oc
loss of a typical industrial p-type Al-BSF
solar cell. As can be seen, the main voltage
losses, as expected, are due to the metallized
regions of the solar cell (i.e. the full-area
Al-BSF). This explains
why the PV industry
is moving towards passivated rear surfaces
and reduced front-surface metallization.
“
The main voltage losses,
as expected, are due to the
metallized regions of the
solar cell.
”
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