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Pvi20 Front Cover indd0ccc6cf01d-the-cell-doctor-a-detailed-health-check-for-industrial-silicon-wafer-solar-cellsFill factor losses
There are three main mechanisms for the
fill factor
FF
losses of a solar cell: (1) loss due
to series resistance (
R
s
); (2) loss due to shunt
resistance (
R
sh
); and (3) loss due to non-ideal
recombination. The two resistances
R
s
and
R
sh
(under maximum power conditions) are
measured, and an advanced
FF
loss analysis
[8] then allows the corresponding
FF
losses
to be extracted.
Series resistance losses
The (measured)
R
s
of the solar cell under
maximum power conditions can be broken
down into more detail if the layout of the
metal contact grid is known (see Fig. 8(a)).
For simple contact-grid layouts (such as the
H-patterned grid shown in Fig. 8(b)), there
are several analytical programs available
in order to calculate this breakdown [9].
p-type c-Si
p
++
Front-surface recombination (J
0fp
, J
0fc
)
Bulk recombination (J
0b
)
Rear-surface recombination (J
0rc
)
Figure 6. Sketch of a standard industrial Al-BSF solar cell, indicating the different solar
cell regions which contribute to recombination losses.
Front, non-metallized
13%
Metal
87%
Figure 7. Voltage losses of a typical industrial p-type Al-BSF solar cell.
Figure 8. (a) Breakdown of measured series resistance of a standard industrial p-type Al-BSF solar cell processed at SERIS;
(b) the simple H-patterned metal grid used. The total series resistance due to the front grid and the bulk were calculated to be
0.44Ωcm
2
, and the remainder of the series resistance (0.16Ωcm
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